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IXEN 60N120 IXEN 60N120D1
NPT3 IGBT
in miniBLOC package
IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V
C G G C
miniBLOC, SOT-227 B E153432 G
E
E
E
IXEN 60N120
IXEN 60N120D1
C = Collector G = Gate E = Emitter *
E C
* Either Emitter terminal can be used as Main or Kelvin Emitter
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 100 65 100 VCES 10 445 V V A A A s W
Features * NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * miniBLOC package - isolated copper base plate - screw terminals - kelvin emitter terminal for easy drive - industry standard outline Applications * single switches * choppers with complementary free wheeling diode * phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.8 200 80 50 680 30 7.2 4.8 3.8 350 2.7 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.28 K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 60 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V
Inductive load, TVJ = 125C VCE = 600 V; IC = 60 A VGE = 15 V; RG = 22
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A
(c) 2003 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
1-4
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
331
IXEN 60N120 IXEN 60N120D1
Diode (D1 version only) Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings
Conduction
Equivalent Circuits for Simulation 110 60 A A
Symbol VF IRM t rr RthJC
Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.3 1.7 41 200 2.7 V V A ns 0.6 K/W
IF = 60 A, VGE = 0 V IF = 60 A, VGE = 0 V, TJ = 125C IF = 60 A, -diF/dt = 500 A/s, VR = 600 V VGE = 0 V, TJ = 125C
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.99 V; R0 = 25 m Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 7 m Thermal Response
Component Symbol TVJ Tstg VISOL MD IISOL 1 mA; 50/60 Hz mounting torque teminal connection torque Conditions (M4) (M4) Conditions Maximum Ratings -40...+150 -40...+150 2500 1.5 1.5 C C V~ Nm Nm
IGBT (typ.)
Cth1 = 0.14 J/K; Rth1 = 0.20 K/W Cth2 = 0.91 J/K; Rth2 = 0.08 K/W
Diode (typ.) Cth1 = 0.08 J/K; Rth1 = 0.45 K/W Cth2 = 0.54 J/K; Rth2 = 0.15 K/W
Symbol
Characteristic Values min. typ. max. 0.1 30 K/W g
RthCH Weight
with heatsink compound
miniBLOC, SOT-227 B
Dim. A B C D E F G H J K L M N O P Q
Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830
Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
M4 screws (4x) supplied
R S T U V W
(c) 2003 IXYS All rights reserved
2-4
331
IXEN 60N120 IXEN 60N120D1
120
A
VGE = 17 V 15 V 13 V 11 V
100
IC IC
120 A 100 80 60
VGE = 17 V
15 V
13 V
11 V
80 60 40 20
TVJ = 25C
9V
9V
40 20
TVJ = 125C
0 0 1 2
VCE
0
3
V
4
0
1
2
VCE
3
V4
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
160
A IC
VCE = 20 V
160 A 120 IF 80
TVJ = 125C
120
80
40
TVJ = 125C TVJ = 25C
40
TVJ = 25C
0 4 6 8 10
VGE
0
12
V 14
0
1
2
VF
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
100
A
trr
20
V
300 ns 240 180 120
TVJ = 125C VR = 600 V IF = 60 A
15
VGE
80
IRM
trr
60 10 40 5
VCE = 600 V IC = 50 A
20
IRM
60 0
0 0 100 200 300 400 nC 500
QG
0 0 200 400 600
-di/dt
IXEN60N120
800 A/s
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
331
(c) 2003 IXYS All rights reserved
3-4
IXEN 60N120 IXEN 60N120D1
20
mJ
td(on)
100 ns 90 80 70 60 50 Eoff
8
mJ
td(off)
800 ns 600 t
16
Eon
6
VCE = 600 V VGE = 15 V RG = 22 TVJ = 125C
12 8 4
Eon
tr
t
4
400
VCE = 600 V VGE = 15 V RG = 22 TVJ = 125C
40 30 20 10 0
2
Eoff tf
200
0 0 20 40 60 80
IC
0
20 40 60 80 IC
0
100 A 120
100 A
Fig. 7
Typ. turn on energy and switching times versus collector current
300 ns 250 200 150 t Eoff
Fig. 8 Typ. turn off energy and switching times versus collector current
12
mJ 1200 ns 1000 800 600
Eoff
15.0
mJ
12.5
Eon
10.0 7.5
VCE = 600 V VGE = 15 V IC = 50 A TVJ = 125C
td(on)
10 8 6 4 2 0 0
VCE = 600 V VGE = 15 V IC = 50 A TVJ = 125C
td(off)
t
Eon
5.0 2.5 0.0 0 20 40 60 80
RG
tr
100 50 0
400 200
tf
100 120
20
40
60
80
RG
100 120
0
Fig. 9
Typ. turn on energy and switching times versus gate resistor
1 K/W
Fig.10 Typ. turn off energy and switching times versus gate resistor
diode IGBT
120
A
100
ICM
0.1
80 60 40
ZthJC 0.01
single pulse
0.001
20 0 0
RG = 22 TVJ = 125C
200
400
600
800 1000 1200 1400 V
VCE
0.0001 0.00001 0.0001 0.001
IXEN60N120
0.01
0.1 t
1
s 10
Fig. 11
Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2003 IXYS All rights reserved
4-4
331

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